PEMD13_PUMD13

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Product data sheet

Rev. 3 — 7 December 2011

7 of 16

NXP Semiconductors

PEMD13; PUMD13

NPN/PNP resistor-equipped transistors; R1 = 4.7 k

, R2 = 47 k

VCE =5V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 40 C

IC/IB =20

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 40 C

Fig 4.

TR1 (NPN): DC current gain as a function of

collector current; typical values

Fig 5.

TR1 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

VCE =0.3 V

(1) Tamb = 40 C

(2) Tamb =25 C

(3) Tamb = 100 C

VCE =5V

(1) Tamb = 40 C

(2) Tamb =25 C

(3) Tamb = 100 C

Fig 6.

TR1 (NPN): On-state input voltage as a

function of collector current; typical values

Fig 7.

TR1 (NPN): Off-state input voltage as a

function of collector current; typical values

IC (mA)

10-1

102

10

1

006aac819

102

10

103

hFE

1

(1)

(2)

(3)

006aac820

IC (mA)

10-1

102

10

1

10-1

1

VCEsat

(V)

10-2

(1)

(2)

(3)

006aac821

IC (mA)

10-1

102

10

1

1

10

VI(on)

(V)

10-1

(1)

(2)

(3)

IC (mA)

10-1

10

1

006aac822

1

10

VI(off)

(V)

10-1

(1)

(2)

(3)