PEMD13_PUMD13

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 3 — 7 December 2011

9 of 16

NXP Semiconductors

PEMD13; PUMD13

NPN/PNP resistor-equipped transistors; R1 = 4.7 k

, R2 = 47 k

VCE = 0.3 V

(1) Tamb = 40 C

(2) Tamb =25 C

(3) Tamb = 100 C

VCE = 5V

(1) Tamb = 40 C

(2) Tamb =25 C

(3) Tamb = 100 C

Fig 12. TR2 (PNP): On-state input voltage as a

function of collector current; typical values

Fig 13. TR2 (PNP): Off-state input voltage as a

function of collector current; typical values

f=1MHz; Tamb =25 CVCE = 5V; Tamb =25 C

Fig 14. TR2 (PNP): Collector capacitance as a function

of collector-base voltage; typical values

Fig 15. TR2 (PNP): Transition frequency as a function

of collector current; typical values of built-in

transistor

006aac826

IC (mA)

-10-1

-102

-10

-1

-1

-10

VI(on)

(V)

-10-1

(1)

(2)

(3)

IC (mA)

-10-1

-10

-1

006aac827

-1

-10

VI(off)

(V)

-10-1

(1)

(2)

(3)

VCB (V)

0

-50

-40

-20

-30

-10

006aac828

4

2

6

8

Cc

(pF)

0

006aac763

IC (mA)

-10-1

-102

-10

-1

102

103

fT

(MHz)

10