Nexperia

PIMC32

50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor (TR2) with negative polarity where applicable

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A; Tamb = 25 °C

50

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = 10 mA; IB = 0 A; Tamb = 25 °C

50

-

-

V

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

ICEO

collector-emitter cut-off

current

VCE = 50 V; IB = 0 A; Tamb = 25 °C

-

-

0.5

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

0.65

mA

hFE

DC current gain

VCE = 5 V; IC = 50 mA; Tamb = 25 °C

70

-

-

VCEsat

collector-emitter

saturation voltage

IC = 50 mA; IB = 2.5 mA; Tamb = 25 °C

-

-

100

mV

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

0.4

0.65

1

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 20 mA; Tamb = 25 °C

0.5

0.95

1.4

V

R1

bias resistor 1 (input)

[1]

1.54

2.2

2.86

kΩ

R2/R1

bias resistor ratio

[1]

4.1

4.55

5

TR1 (NPN)

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

7

-

pF

fT

transition frequency

VCE = 5 V; IC = 50 mA; f = 100 MHz;

Tamb = 25 °C

[2]

-

225

-

MHz

TR2 (PNP)

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

11

-

pF

fT

transition frequency

VCE = -5 V; IC = -50 mA; f = 100 MHz;

Tamb = 25 °C

[2]

-

140

-

MHz

[1] See section "Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor

PIMC32

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Product data sheet

16 February 2022

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