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GWIXP420BBT Datasheet(PDF) 88 Page - Intel Corporation |
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GWIXP420BBT Datasheet(HTML) 88 Page - Intel Corporation |
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88 / 134 page ![]() Intel® IXP42X Product Line of Network Processors and IXC1100 Control Plane Processor March 2005 Datasheet 88 Document Number: 252479, Revision: 005 5.4.6 MDIO DC Parameters 5.4.7 SDRAM Bus DC Parameters 5.4.8 Expansion Bus DC Parameters Table 30. MDIO DC Parameters Symbol Parameter Conditions Min. Typ. Max. Units Notes VIH Input-high voltage 2.0 V VIL Input-low voltage 0.8 V VOH Output-high voltage IOUT = -4 mA 2.4 V VOL Output-low voltage IOUT = 4 mA 0.4 V IIL Input-leakage current 0 < VIN < VCCP -10 10 µA CIN Input-pin capacitance 5 pF 1 CINMDIO Input-pin capacitance 5 pF 1 Note: 1. These values are typical values seen by the manufacturing process and are not tested. Table 31. SDRAM Bus DC Parameters Symbol Parameter Conditions Min. Typ. Max. Units Notes VIH Input-high voltage 2.0 V 1 VIL Input-low voltage 0.8 V 2 VOH Output-high voltage IOUT = -4 mA 2.4 V VOL Output-low voltage IOUT = 4 mA 0.4 V IIL Input-leakage current 0 < VIN < VCCP -5 5 µA IOL Output-leakage current 0 < VIN < VCCP -5 5 µA CINCLK Input-pin capacitance 4 pF 3 CIO I/O-pin capacitance 5 pF 3 Notes: 1. VIH overshoot: VIH (MAX) = VCCP + 2 V for a pulse width < 3 ns, and the pulse width cannot be greater than one third of the cycle rate. 2. VIL undershoot: VIL (MIN) = -2 V for a pulse width < 3 ns cannot be exceeded. 3. These values are typical values seen by the manufacturing process and are not tested. Table 32. Expansion Bus DC Parameters (Sheet 1 of 2) Symbol Parameter Conditions Min. Typ. Max. Units Notes VIH Input-high voltage 2.0 V VIL Input-low voltage 0.8 V VOH Output-high voltage IOUT = -4 mA 2.4 V 1 Notes: 1. Test conditions were a 70 pF load to ground. 2. These values are typical values seen by the manufacturing process and are not tested. |
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