Data Sheet G15977EJ4V0DS

4

µPC4574

µPC4574C(5), µPC4574G2(5)

ELECTRICAL CHARACTERISTICS (TA = 25°C, V± =

±15V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Input Offset Voltage

VIO

RS

≤ 50 Ω

±0.3

±1

mV

Input Offset Current

Note 7

IIO

±10

±60

nA

Input Bias Current

Note 7

IB

500

650

nA

Large Signal Voltage Gain

AV

RL

≥ 2 kΩ , VO = ±10 V

50000

300000

Supply Current

Note 8

ICC

IO = 0 A

8.5

11

mA

Common Mode Rejection Ratio

CMR

85

100

dB

Supply Voltage Rejection Ratio

SVR

85

100

dB

RL

≥ 10 kΩ

±13

±13.4

Output Voltage Swing

Vom

RL

≥ 2 kΩ

±11.5

+12.8

−12.4

V

Common Mode Input Voltage Range

VICM

±13

±14

V

Slew Rate

SR

RL

≥ 2 kΩ

4

6

V/

µs

Gain Band Width Product

GBW

fO = 100 kHz

10

14

MHz

Unity Gain Frequency

funity

open loop

7

MHz

Phase Margin

φunity

open loop

50

degree

Total Harmonic Distortion

THD

VO = 3 Vr.m.s., f = 20 Hz to 20 kHz (Fig.1)

0.002

%

RIAA (Fig.2)

1.2

Input Equivalent Noise Voltage

Vn

FLAT+JIS A, RS = 100

Ω (Fig.3)

0.53

0.65

µVr.m.s.

fO = 10 Hz, RS = 100

Ω

5.5

Input Equivalent Noise Voltage Density

en

fO = 1 kHz, RS = 100

Ω

5.0

nV/ Hz

Input Equivalent Noise Current Density

in

fO = 1 kHz

0.7

pA/ Hz

Channel Separation

f = 20 Hz to 20 kHz

120

dB

Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.

8. This current flows irrespective of the existence of use.