MSC080SMA120B4

Device Specifications

© 2023 Microchip Technology Inc.

and its subsidiaries

Data Sheet

DS00004673B-page 2

1.

Device Specifications

This section shows the specifications of the MSC080SMA120B4 device.

1.1

Absolute Maximum Ratings

The following table shows the absolute maximum ratings of the MSC080SMA120B4 device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Ratings

Unit

VDSS

Drain source voltage

1200

V

ID

Continuous drain current at TC = 25 °C

40

A

Continuous drain current at TC = 100 °C

28

IDM

Pulsed drain current1

90

VGS

Gate-source voltage

23 to –10

V

PD

Total power dissipation at TC = 25 °C

231

W

Linear derating factor

1.54

W/°C

Note: 

1.

Repetitive rating: pulse width and case temperature limited by maximum junction temperature.

The following table shows the thermal and mechanical characteristics of the MSC080SMA120B4 device.

Table 1-2. Thermal and Mechanical Characteristics

Symbol

Characteristic/Test Conditions

Min

Typ

Max

Unit

RθJC

Junction-to-case thermal resistance

0.50

0.65

°C/W

TJ

Operating junction temperature

–55

175

°C

TSTG

Storage temperature

–55

150

°C

TL

Lead temperature for 10 seconds

300

°C

Mounting torque, 6-32 or M3 screw

10

lbf-in

1.1

N-m

Wt

Package weight

0.22

oz

6.2

g

1.2

Electrical Performance

The following table shows the static characteristics of the MSC080SMA120B4 device. TJ = 25 °C unless otherwise

specified.

Table 1-3. Static Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

V(BR)DSS Drain-source breakdown voltage

VGS = 0 V, ID = 100 μA

1200

V

RDS(on)

Drain-source on resistance1

VGS = 20 V, ID = 15 A

80

100

mΩ