MSC080SMA120B4

Device Specifications

© 2023 Microchip Technology Inc.

and its subsidiaries

Data Sheet

DS00004673B-page 3

...........continued

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

VGS(th)

Gate-source threshold voltage

VGS = VDS, ID = 1 mA

1.9

3.0

4.5

V

IDSS

Zero gate voltage drain current

VDS = 1200 V, VGS = 0 V

100

µA

VDS = 1200 V, VGS = 0 V, TJ =

125 °C

500

IGSS

Gate-source leakage current

VGS = 20 V/–10 V

±100

nA

Note: 

1.

Pulse test: pulse width < 380 μs, duty cycle < 2%.

The following table shows the dynamic characteristics of the MSC080SMA120B4 device. TJ = 25 °C unless otherwise

specified.

Table 1-4. Dynamic Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input capacitance

VGS = 0 V

VDD = 1000 V

VAC = 25 mV

ƒ = 200 kHz

1100

pF

Crss

Reverse transfer

capacitance

6.2

Coss

Output capacitance

91

Qg

Total gate charge

VGS = –5 V/20 V

VDD = 800 V

ID = 15 A

64

nC

Qgs

Gate-source charge

12

Qgd

Gate-drain charge

19

td(on)

Turn-on delay time

VDD = 850 V

VGS = –5 V/20 V

ID = 20 A

Rg(ext) = 8 Ω

Freewheeling diode =

MSC080SMA120B4 (VGS = –5

V) (reference Fig. 1-17)

13

ns

tr

Voltage rise time

11

td(off)

Turn-off delay time

22

tf

Voltage fall time

12

Eon

Turn-on switching energy

469

µJ

Eoff

Turn-off switching energy

47

ESR

Gate equivalent series

resistance

f = 1 MHz, 25 mV, drain short

1.9

Ω

SWCT

Short circuit withstand time

VDS = 960 V, VGS = 20 V

3

µs

EAS

Avalanche energy, single

pulse

VDS = 150 V, ID = 15 A

100

mJ

The following table shows the body diode characteristics of the MSC080SMA120B4 device. TJ = 25 °C unless

otherwise specified.

Table 1-5. Body Diode Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

VSD

Diode forward voltage

ISD = 15 A, VGS = 0 V

4.0

V

ISD = 15 A, VGS = –5 V

4.2