IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

7.5

9.0

S

C

iss

2800

pF

C

oss

V

GS

= 0 V, V

300

pF

C

rss

70

pF

t

d(on)

18

30

ns

t

r

V

GS

= 10 V, V

V

40

ns

t

d(off)

I

I

76

100

ns

t

f

32

60

ns

Q

g(on)

110

120

nC

Q

gs

V

GS

= 10 V, V

V

15

25

nC

Q

gd

40

50

nC

R

thJC

0.90

K/W

R

thCK

0.30

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

13

A

I

SM

Repetitive; pulse width limited by T

JM

52

A

V

SD

I

1.5

V

Note 1

t

rr

600

ns

I

-di/dt = 100 A/

µs,

V

Note: All terminals are solder plated.

1 - Gate

2 - Drain

3 - Source

ISOPLUS220 OUTLINE

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. I

I

3. See IXTH12N50A data sheet for characteristic curves.

IXTC 13N50