IXTC13N50 datasheet(1/2 Pages) IXYS

Part #	IXTC13N50

Description	Power MOSFET ISOPLUS220

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C12

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

48

A

I

AR

T

C

= 25

°C13

A

E

AR

T

C

= 25

°C18

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

140

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Weight

3g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 250 µA

500

V

GS(th)

V

DS

= V

GS, ID = 2.5 mA

2

4

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= 0.8 V

DSS

T

J = 25°C

200

µA

V

GS = 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS = 10 V, ID = IT

0.4

Ω

Notes 1, 2

N-Channel Enhancement Mode

High dv/dt, Low t

rr, HDMOS

TM Family

G = Gate,

D = Drain,

S = Source

* Patent pending

Power MOSFET

IXTC 13N50

V

DSS

= 500 V

ISOPLUS220TM

I

D25

= 12 A

Electrically Isolated Back Surface

R

DS(on)

= 0.4

Ω

98823 (05/01)

G

D

S

ADVANCE TECHNICAL INFORMATION

ISOPLUS 220TM

Features

l Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

-Isolatedmountingsurface

-2500Velectricalisolation

l Lowdraintotabcapacitance(<35pF)

l Low R

DS (on) HDMOS

TM process

l Ruggedpolysilicongatecellstructure

l UnclampedInductiveSwitching(UIS)

rated

Applications

l DC-DC converters

l Batterychargers

l Switched-modeandresonant-mode

power supplies

l DC choppers

l ACmotorcontrol

Advantages

l Easyassembly:noscrewsorisolation

foilsrequired

l Space savings

l High power density

l Lowcollectorcapacitancetoground

(low EMI)

Isolated back surface*

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