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UPD16804GS Datasheet(PDF) 8 Page - Renesas Technology Corp |
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UPD16804GS Datasheet(HTML) 8 Page - Renesas Technology Corp |
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8 / 14 page ![]() Notes 1. It is recommended to connect a capacitor of 1 to 10 µF between VM and GND to protect the gate of the DMOS FET from surge voltage. 2. Insert a resistor of 50 ( ±10) Ω to prevent mal- functioning. VM = 0.5 V to 7.5 V VG = 11 V to 14 V VDD = 3.0 V to 6.0 V R1 =50 Ω Note 2 VDD 5 VM VG OUT1 OUT2 PGND VM 10 2 3 16 1 15 4 11 13 12 DGND INC STBY 14 8 6 7 IN1 IN2 9 M OSC circuit Charge pump circuit Control circuit Level shift circuit D MOS FET H bridge circuit Battery CPU Pull-down resistor 50 k Ω TYP. Film take-up motor Forward mode Brake mode Reverse mode Stop mode DC-DC convertor C4 Note 1 1 to 10 F µ H H L L IN1 IN2 |
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