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1SS400CS Datasheet(PDF) 1 Page - Rohm |
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1SS400CS Datasheet(HTML) 1 Page - Rohm |
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1 / 3 page ![]() 1SS400CS Diodes 1/2 Switching diode 1SS400CS Applications 0.16±0.05 0.37±0.02 0~0.1 0.6±0.06 0.35±0.1 0.156 0.58 0.60±0.06 CATHODE MARK ROHM : VMN2 dot (year week factory) + day VMN2 0.55 High speed switching Features 1) Ultra small mold type. (VMN2) 2) High reliability Construction Silicon epitaxial planer External dimensions (Unit : mm) Land size figure Structure Taping dimensions (Unit : mm) 0.7±0.05 4.0±0.1 2±0.05 0.01 φ0.50±0.05 4.0±0.1 2.0±0.05 φ1.55±0.05 0.01 0.2±0.05 0.52±0.05 0.42 Absolute maximum ratings (Ta=25 °C) Symbol Unit VRM V VR V IFM mA Io mA Isurge mA Tj ℃ Tstg ℃ Electrical characteristic (Ta=25 °C) (∗ Per chip) Sym bol Min. Typ. Max. Unit Conditions VF IR Ct trr -- 1.2 V IF=100m A -- 0.1 µA VR=80V - - 3.0 pF VR=0.5V , f=1MHz - - 4.0 ns VR=6V , IF=10m A , RL=100Ω orward voltage Param eter Revers e recovery tim e Capacitance between term inal Revers e current F Junction temperature Storage temperature 150 -55 to +150 Limits 80 100 90 225 500 Parameter ard current orward voltage(DC) (t=1s) Reverse voltage (DC) Average rectified forw Reverse voltage (repetitive peak) F Surge current |
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