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AS4CM4EOQ Datasheet(PDF) 8 Page - Alliance Semiconductor Corporation

Part # AS4CM4EOQ
Description  4M X 4 CMOS Quad CAS DRAM (EDO) family
PDF  16 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4CM4EOQ Datasheet(HTML) 8 Page - Alliance Semiconductor Corporation

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AS4C4M4EOQ
AS4C4M4E1Q
®
3/22/01; v.1.0
Alliance Semiconductor
P. 8 of 16
Hyper page mode cycle
Output enable
Self-refresh cycle
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tCPWD
CAS precharge to WE delay time
45
–
52
–
ns
tCPA
Access time from CAS precharge
–
28
–
35
ns
13
tRASP
RAS pulse width
50
100K
60
100K
ns
tDOH
Previous data hold time from CAS
5–
5–
ns
tREZ
Output buffer turn off delay from RAS
0
13
0
15
ns
tWEZ
Output buffer turn off delay from WE
0
13
0
15
ns
tOEZ
Output buffer turn off delay from OE
0
13
0
15
ns
tHPC
Hyper page mode cycle time
20
–
25
–
ns
tHPRWC
Hyper page mode RMW cycle
47
–
56
–
ns
tRHCP
RAS hold time from CAS
30
–
35
–
ns
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tCLZ
CAS to output in Low Z
0
–
0
–
ns
8
tROH
RAS hold time referenced to OE
8–
10
–
ns
tOEA
OE access time
–
13
–
15
ns
tOED
OE to data delay
13
–
15
–
ns
tOEZ
Output buffer turnoff delay from OE
0
13
0
15
ns
8
tOEH
OE command hold time
10
–
10
–
ns
tOLZ
OE to output in Low Z
0
–
0
–
ns
tOFF
Output buffer turn-off time
0
13
0
15
ns
8,10
Std
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tRASS
RAS pulse width
(CBR self refresh)
100
–
100
–
µs
tRPS
RAS precharge time
(CBR self refresh)
90
–
105
–
ns
tCHS
CAS
hold time
(CBR self refresh)
-50
–
-50
–
ns



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