Nexperia

PMPB07R3EN

30 V, N-channel Trench MOSFET

VGS (V)

0

4

3

1

2

aaa-032397

20

10

30

40

ID

(A)

0

Tj = 150 °C

Tj = 25 °C

VDS = 5 V

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60

180

120

0

60

aaa-032398

1.0

0.5

1.5

2.0

a

0

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

Tj (°C)

-60

180

120

0

60

aaa-032399

1

2

3

VGS(th)

(V)

0

min

typ

max

ID = 250 µA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

VDS (V)

10-1

102

10

1

aaa-032400

103

102

104

C

(pF)

10

Ciss

Crss

Coss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMPB07R3EN

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Nexperia B.V. 2023. All rights reserved

Product data sheet

18 August 2023

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