PMPB07R3EN

30 V, N-channel Trench MOSFET

18 August 2023

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Logic-level compatible

• Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies

• Superfast switching with soft-recovery

• Low spiking and ringing for low EMI designs

• Exposed drain pad for excellent thermal conduction

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

3. Applications

• DC to DC conversion

• Battery management

• Low-side load switch

• Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

-

-

30

V

VGS

gate-source voltage

Tj = 25 °C

-20

-

20

V

ID

drain current

VGS = 10 V; Tamb = 25 °C; t ≤ 5 s

[1]

-

-

17

A

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 12 A; Tj = 25 °C

-

7.3

8.6

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.