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RH40N25FSY3 Datasheet(PDF) 3 Page - STMicroelectronics

Part # RH40N25FSY3
Description  N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RH40N25FSY3 Datasheet(HTML) 3 Page - STMicroelectronics

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STRH40N25FSY3
Electrical ratings
3/13
1
Electrical ratings
Table 1.
Absolute maximum ratings (pre-irradiation)
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
250
V
VGS
Gate-source voltage
±16
V
ID
(1)
1.
Rated according to the Rthj-case
Drain current (continuous) at TC= 25°C
36
A
ID
(1)
Drain current (continuous) at TC= 100°C
23
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
144
A
PTOT
(1)
Total dissipation at TC= 25°C
278
W
dv/dt (3)
3.
ISD < 40A, di/dt < 400A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
4
V/ns
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case
0.45
°C/W
Rthc-s
Case-to-sink
0.21
°C/W
Rthj-amb Thermal resistance junction -amb
48
°C/W
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
40
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
320
mJ
EAR
Repetitive avalanche
25
mJ



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