Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

RH40N25FSY3 Datasheet(PDF) 4 Page - STMicroelectronics

Part # RH40N25FSY3
Description  N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET
PDF  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RH40N25FSY3 Datasheet(HTML) 4 Page - STMicroelectronics

  RH40N25FSY3 Datasheet HTML 1Page - STMicroelectronics RH40N25FSY3 Datasheet HTML 2Page - STMicroelectronics RH40N25FSY3 Datasheet HTML 3Page - STMicroelectronics RH40N25FSY3 Datasheet HTML 4Page - STMicroelectronics RH40N25FSY3 Datasheet HTML 5Page - STMicroelectronics RH40N25FSY3 Datasheet HTML 6Page - STMicroelectronics RH40N25FSY3 Datasheet HTML 7Page - STMicroelectronics RH40N25FSY3 Datasheet HTML 8Page - STMicroelectronics RH40N25FSY3 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 13 page
background image
Electrical characteristics
STRH40N25FSY3
4/13
2
Electrical characteristics
(TCASE = 25°C unless otherwise specified)
2.1
Pre-irradiation
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
80% BVDss
10
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±16V
±
100
nA
BVDSS
Drain-to-source breakdown
voltage
ID = 1mA, VGS = 0V
250
V
VGS(th)
Gate threshold voltage
VDS =VGS, ID = 1mA
2
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 12V, ID = 20A
0.084
0.1
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 0V, f=1MHz,
VGS=12V
9100
650
45
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-to-source charge
Gate-to-drain (“Miller”)
charge
VDD = 200V, ID = 40A,
VGS=12V
202
34
58
280
47
80
nC
nC
nC
RG
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
1.4
3
Ω
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 125V, ID =40 A,
RG = 4.7Ω, VGS = 12V
33
80
123
145
ns
ns
ns
ns



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com