DMN2016UFX

Document number: DS40577 Rev. 3 - 2

2 of 7

www.diodes.com

June 2018

© Diodes Incorporated

DMN2016UFX

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

24

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

ID

9.9

7.9

A

Continuous Drain Current (Note 6) VGS = 2.5V

Steady

State

TA = +25°C

TA = +70°C

ID

8.6

6.9

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

3.0

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

80

A

Avalanche Current, L = 0.1mH (Note 7)

IAS

20

A

Avalanche Energy, L = 0.1mH (Note 7)

EAS

21

mJ

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Total Power Dissipation (Note 5)

PD

1.07

W

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)

RJA

117

°C/W

Total Power Dissipation (Note 6)

PD

2.23

W

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)

RJA

56

°C/W

Thermal Resistance, Junction to Case (Note 6)

RJC

11

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

24





V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS





1

µA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS





±10

µA

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.4

0.6

1.5

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)



9.1

15

m

Ω

VGS = 4.5V, ID = 6.5A

9.3

17

VGS = 4.0V, ID = 5.6A

10.1

18

VGS = 3.1V, ID = 5.6A

11.2

20

VGS = 2.5V, ID = 5.6A

Diode Forward Voltage

VSD



0.6

0.9

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



950



pF

VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss



130



pF

Reverse Transfer Capacitance

Crss



120



pF

Gate Resistance

Rg



1.3



Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

Qg



14



nC

VGS = 4.5V, VDS = 10V, ID = 8A

Gate-Source Charge

Qgs



1.8



nC

Gate-Drain Charge

Qgd



6.5



nC

Turn-On Delay Time

tD(ON)



3.8



ns

VDS = 10V, ID = 4A

VGS = 4.5V, RG = 2Ω

Turn-On Rise Time

tR



5.7



ns

Turn-Off Delay Time

tD(OFF)



33



ns

Turn-Off Fall Time

tF



6.8



ns

Body Diode Reverse Recovery Time

tRR



9.3



ns

IF = 4A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



2.3



nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.