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STB120NH03L Datasheet(PDF) 5 Page - STMicroelectronics |
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STB120NH03L Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 17 page ![]() STB120NH03L - STI120NH03L - STP120NH03L Electrical characteristics 5/17 Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed) 60 240 A A VSD (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 30A, VGS = 0 1.4 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60A, di/dt = 100A/µs, VDD = 30V, TJ =150°C 46 64 2.8 ns nC A |
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