Nexperia

PUSB3BB2DF

Extremely low clamping low capacitance ESD protection

t (µs)

0

40

30

10

20

001aaa630

40

80

120

IPP

(%)

0

e-t

100 % IPP; 8 µs

50 % IPP; 20 µs

Fig. 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 and IEC 61643-321

001aaa631

IPP

100 %

90 %

t

30 ns

60 ns

10 %

tr = 0.6 ns to 1 ns

Fig. 2. ESD pulse waveform according to

IEC 61000-4-2

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

IR = 1 mA; Tamb = 25 °C

-

7.4

-

V

IRM

reverse leakage current VRWM = 4 V; Tamb = 25 °C

-

1

50

nA

f = 1 MHz; VR = 0 V; Tamb = 25 °C

-

0.26

-

pF

Cd

diode capacitance

f = 1 MHz; VR = 1.5 V; Tamb = 25 °C

-

0.24

-

pF

IPPM = 8 A; 8/20 µs; Tamb = 25 °C

[1]

-

5.3

-

V

IPPM = 8 A; TLP; tp = 100 ns

[2]

-

4.5

-

V

VCL

clamping voltage

IPPM = 16 A; TLP; tp = 100 ns;

Tamb = 25 °C

[2]

-

6.2

-

V

IR = 5 A; Tamb = 25 °C

[2]

-

0.25

-

Ω

Rdyn

dynamic resistance

IR = -5 A; Tamb = 25 °C

[2]

-

0.25

-

Ω

f-3dB

-3 dB cut-off frequency Tamb = 25 °C; normalized to attenuation

at 1 MHz

-

> 18

-

GHz

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[2] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.

PUSB3BB2DF

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2020. All rights reserved

Product data sheet

3 November 2020

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