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PSD835G2 Datasheet(PDF) 26 Page - STMicroelectronics |
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PSD835G2 Datasheet(HTML) 26 Page - STMicroelectronics |
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26 / 102 page ![]() PSD835G2 26/102 Figure 6. Selecting the Upper or Lower Block in a Primary Flash Memory Sector Ready/Busy (PE4) This signal can be used to output the Ready/Busy status of the PSD. The output on Ready/Busy (PE4) is a ’0’ (Busy) when Flash memory blocks are being written to, or when the Flash memory block is being erased. The output is a '1' (Ready) when no WRITE or Erase cycle is in progress. Memory Operation The primary Flash memory and secondary Flash memory are addressed through the MCU Bus In- terface. The MCU can access these memories in one of two ways: – The MCU can execute a typical bus WRITE or READ operation just as it would if accessing a RAM or ROM device using standard bus cycles. – The MCU can execute a specific instruction that consists of several WRITE and READ operations. This involves writing specific data patterns to special addresses within the Flash memory to invoke an embedded algorithm. These instructions are summarized in Table Table 28., page 27. Typically, the MCU can read Flash memory using READ operations, just as it would read a ROM de- vice. However, Flash memory can only be altered using specific Erase and Program instructions. For example, the MCU cannot write a single byte di- rectly to Flash memory as it would write a byte to RAM. To program a byte into Flash memory, the MCU must execute a Program instruction, then test the status of the Program cycle. This status test is achieved by a READ operation or polling Ready/Busy (PE4). Flash memory can also be read by using special instructions to retrieve particular Flash device in- formation (sector protect status and ID). DPLD ARRAY FA15 FLASH MEMORY CHIP SELECT PINS FS0-FS7 PRIMARY FLASH MEMORY SECTOR A15 ADDR A15 NVM CONTROL BIT(1) A14-A0 MUX ai07653 |
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