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PSD835G2 Datasheet(PDF) 26 Page - STMicroelectronics

Part # PSD835G2
Description  Flash PSD, 5V Supply, for 8-bit MCUs 4 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM
PDF  102 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PSD835G2 Datasheet(HTML) 26 Page - STMicroelectronics

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Figure 6. Selecting the Upper or Lower Block in a Primary Flash Memory Sector
Ready/Busy (PE4)
This signal can be used to output the Ready/Busy
status of the PSD. The output on Ready/Busy
(PE4) is a ’0’ (Busy) when Flash memory blocks
are being written to, or when the Flash memory
block is being erased. The output is a '1' (Ready)
when no WRITE or Erase cycle is in progress.
Memory Operation
The primary Flash memory and secondary Flash
memory are addressed through the MCU Bus In-
terface. The MCU can access these memories in
one of two ways:
–
The MCU can execute a typical bus WRITE or
READ operation just as it would if accessing a
RAM or ROM device using standard bus
cycles.
–
The MCU can execute a specific instruction
that consists of several WRITE and READ
operations. This involves writing specific data
patterns to special addresses within the Flash
memory to invoke an embedded algorithm.
These instructions are summarized in Table
Table 28., page 27.
Typically, the MCU can read Flash memory using
READ operations, just as it would read a ROM de-
vice. However, Flash memory can only be altered
using specific Erase and Program instructions. For
example, the MCU cannot write a single byte di-
rectly to Flash memory as it would write a byte to
RAM. To program a byte into Flash memory, the
MCU must execute a Program instruction, then
test the status of the Program cycle. This status
test is achieved by a READ operation or polling
Ready/Busy (PE4).
Flash memory can also be read by using special
instructions to retrieve particular Flash device in-
formation (sector protect status and ID).
DPLD
ARRAY
FA15
FLASH MEMORY CHIP SELECT PINS FS0-FS7
PRIMARY
FLASH
MEMORY
SECTOR
A15
ADDR A15
NVM CONTROL BIT(1)
A14-A0
MUX
ai07653



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