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STD10P10F6 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD10P10F6
Description  P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD10P10F6 Datasheet(HTML) 3 Page - STMicroelectronics

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2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 3. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = -250 μA
-100
V
IDSS
Zero gate voltage
drain current
VGS = 0 V, VDS = -100 V
-1
µA
VGS = 0 V, VDS = -100 V, TC = 125 °C(1)
-10
µA
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = -250 µA
-2
-4
V
RDS(on)
Static drain-source on- resistance VGS = -10 V, ID = -5 A
0.136
0.18
Ω
1. Defined by design, not subject to production test.
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = -80 V, f = 1 MHz, VGS = 0 V
-
864
-
pF
Coss
Output capacitance
-
45
-
pF
Crss
Reverse transfer capacitance
-
25
-
pF
Qg
Total gate charge
VDD = -80 V, ID = -10 A, VGS = -10 V
(see Figure 13. Gate charge test circuit)
-
16.5
-
nC
Qgs
Gate-source charge
-
3.5
-
nC
Qgd
Gate-drain charge
-
3.8
-
nC
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = -80 V, ID = -5 A, RG = 4.7 Ω,
VGS = -10 V (see Figure 12. Switching
times test circuit for resistive load)
-
10.5
-
ns
tr
Rise time
-
4.8
-
ns
td(off)
Turn-off delay time
-
24
-
ns
tf
Fall time
-
4.5
-
ns
Table 6. Source drain-diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VSD (1)
Forward on voltage
ISD = -5 A, VGS = 0 V
-
-1.1
V
trr
Reverse recovery time
ISD = -10 A, di/dt = 100 A/µs, VDD = -80 V
(see Figure 14. Test circuit for inductive
load switching and diode recovery times)
-
26.5
ns
Qrr
Reverse recovery charge
-
36.5
nC
IRRM
Reverse recovery current
-
-2.7
A
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
STD10P10F6
Electrical characteristics
DS10343 - Rev 3
page 3/16



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