1

3

TAB

2

DPAK

D(2, TAB)

G(1)

S(3)

AM01476v1_tab

Features

Order code

VDS

RDS(on) max.

ID

STD4NK100Z

1000 V

6.8 Ω

2.2 A

•

AEC-Q101 qualified

•

100% avalanche tested

•

Gate charge minimized

•

Very low intrinsic capacitance

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed

using the SuperMESH technology by STMicroelectronics, an optimization of the well-

established PowerMESH. In addition to a significant reduction in on-resistance, this

device is designed to ensure a high level of dv/dt capability for the most demanding

applications.

Product status link

STD4NK100Z

Product summary(1)

Order code

STD4NK100Z

Marking

4NK100Z

Package

DPAK

Packing

Tape and reel

1. The HTRB test was performed at

80% V(BR)DSS in compliance with AEC-

Q101 rev. C. All the other tests were

performed according to rev. D.

Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH

Power MOSFET in a DPAK package

STD4NK100Z

Datasheet

DS8902 - Rev 3 - April 2023

For further information contact your local STMicroelectronics sales office.

www.st.com