2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

1000

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 1000 V

1

µA

VGS = 0 V, VDS = 1000 V, TC = 125 °C(1)

50

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 50 µA

3.0

3.75

4.5

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 1.1 A

5.4

6.8

Ω

1. Specified by design, not tested in production.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

-

601

-

pF

Coss

Output capacitance

-

53

-

pF

Crss

Reverse transfer capacitance

-

12

-

pF

Coss eq. (1)

Equivalent output capacitance

VGS = 0 V, VDS = 0 to 800 V

-

15

-

pF

Qg

Total gate charge

VDD = 800, ID = 2.5 A, VGS = 0 to 10 V

(see Figure 14. Test circuit for gate charge

behavior)

-

18

-

nC

Qgs

Gate-source charge

-

3.6

-

nC

Qgd

Gate-drain charge

-

9.2

-

nC

1. Coss eq. is defined as the constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 500 V, ID = 1.25 A,

RG = 4.7 Ω, VGS = 10 V

see (Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time waveform)

-

15

-

ns

tr

Rise time

-

7.5

-

ns

td(off)

Turn-off delay time

-

32

-

ns

tf

Fall time

-

39

-

ns

STD4NK100Z

Electrical characteristics

DS8902 - Rev 3

page 3/15