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FF300R12M Datasheet(PDF) 3 Page - Inchange Semiconductor Company Limited

Part # FF300R12M
Description  Trench gate Field-Stop IGBT
PDF  5 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FF300R12M Datasheet(HTML) 3 Page - Inchange Semiconductor Company Limited

  FF300R12M Datasheet HTML 1Page - Inchange Semiconductor Company Limited FF300R12M Datasheet HTML 2Page - Inchange Semiconductor Company Limited FF300R12M Datasheet HTML 3Page - Inchange Semiconductor Company Limited FF300R12M Datasheet HTML 4Page - Inchange Semiconductor Company Limited FF300R12M Datasheet HTML 5Page - Inchange Semiconductor Company Limited  
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FF300R12M
Trench gate Field-Stop IGBT
www.iscsemi.com
2023-8-14
3
MAXIMUM RATED VALUES OF DIODE(TC=25℃ UNLESS OTHERWISE SPECIFIED)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
1200
V
IF
Diode Continuous Forward Current
300
V
IFM
Diode Maximum Forward Current
600
V
ELECTRICAL CHARACTERISOF DIODE(TC=25℃ UNLESS OTHERWISE SPECIFIED)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VF
Diode Forward Voltage
IF=300A; TC=25℃
--
2.0
2.55
V
VF
Diode Forward Voltage
IF=300A; TC=125℃
--
1.7
--
V
IRM
Peak Reverse recovery current
VR=600V;IF=300A;
-diF/dt=5500A/us; TVJ=25℃
--
230
--
A
trr
Reverse Recovery Time
--
410
--
ns
Qrr
Reverse Recovery Charge
--
30
--
uC
IRM
Peak Reverse recovery current
VR=600V;IF=300A;
-diF/dt=5500A/us; TVJ=125℃
--
300
--
A
trr
Reverse Recovery Time
--
600
--
ns
Qrr
Reverse Recovery Charge
--
50
--
uC
Rth j-c
Thermal Resistance,Junction to Case Diode
--
0.13
--
℃
/W
INTERNAL NTC-THERMISTOR CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
R25
Rated Resistance
TC=25℃
--
5
--
K
Ω
△
R/R
Deviation of R100
TC = 100℃, R100 = 493
Ω
-5
--
5
%
P25
Power Dissipation
TC=25℃
20
mW
B25/50
B-Value
R2 = R25 exp [B25/50(1/T2 -
1/(298,15 K))]
--
3378
--
K
B25/80
R2 = R25 exp [B25/80(1/T2 -
1/(298,15 K))]
--
3439
--
K



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