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FF300R12M Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # FF300R12M
Description  Trench gate Field-Stop IGBT
PDF  5 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FF300R12M Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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FF300R12M
Trench gate Field-Stop IGBT
www.iscsemi.com
2023-8-14
1
DESCRIPTION
·
Short Circuit Rated＞ 10µs
·
Low Switching Loss
·
Low Stray Inductance
·
Copper Wire Bonding on Power Terminal
·
Lead Free, Compliant with RoHS Requirement
APPLICATIONS
·
Hybrid Electrical Vehicles(H)EV
·
Automotive Applications
·
Commercial Agriculture Vehicles
·
Motor Drives
IGBT, INVERTER MAXIMUM RATED VALUES(TC=25℃ UNLESS OTHERWISE SPECIFIED)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1200
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
370
A
IC
Collector Current-Continuous
@ TC=60℃
300
A
ICM
Pulsed Collector Current
600
A
PD
Power Dissipation ,
TC=25℃
1950
W
ELECTRICAL CHARACTERISTICS(TC=25℃ UNLESS OTHERWISE SPECIFIED)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 2mA
1200
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC= 12mA
4.5
--
6.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 300A; VCE= 15V,
TC=25℃
--
3.2
3.75
V


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