BY558 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1998 Jun 25

Philips Semiconductors

Product speciﬁcation

Damper diodes

BY558; BY578

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

≥40 µm, see Fig.4.

For more information please refer to the

‘General Part of Handbook SC01’.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

IF = 5 A; Tj =Tj max; see Fig.3

−

1.3 V

IF = 5 A; see Fig.3

−

1.7 V

reverse current

VR =VRRMmax; Tj = 150 °C

−

175

µA

trr

reverse recovery time

when switched from IF = 0.5 A to

IR = 1 A; measured at IR = 0.25 A;

see Fig.6

−

250

VFRM

forward recovery voltage

IF = 5 A; dIF/dt = 50 A/µs; see Fig.5

tfr

forward recovery time

IF = 5 A; dIF/dt = 50 A/µs; VF =5V;

see Fig.5

260

350

IF = 5 A; dIF/dt = 50 A/µs; VF =2V;

see Fig.5

700

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

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