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AD82587D Datasheet(PDF) 39 Page - Elite Semiconductor Memory Technology Inc. |
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AD82587D Datasheet(HTML) 39 Page - Elite Semiconductor Memory Technology Inc. |
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39 / 45 page ![]() ESMT AD82587D Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2018 Revision: 1.6 39/45 Address 0X20 : Top 8 bits of DRC energy coefficient BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] DRC_ECT [7:0] Top 8 Bits of DRC Energy Coefficient X User programmed 00000000 1/256 Address 0X21 : Bottom 8 bits of DRC energy coefficient BIT NAME DESCRIPTION VALUE FUNCTION B[7:0] DRC_ECB [7:0] Bottom 8 Bits of DRC Energy Coefficient X User programmed 00010000 1/256 x2[n] DRC_EC Z-1 xrms[n] 1-DRC_EC The above figure illustrates the digital processing of calculating RMS signal power. In this processing, a DRC energy coefficient is required, which can be programmed for different frequency range. Energy coefficient is defined by 16-bit representation composed of registers controlled by I2C. The device addresses of DRC energy coefficient are 0X20, and 0X21. The following table shows the DRC energy coefficient numerical representation. Sample calculation for DRC energy coefficient DRC energy coefficient dB Linear Decimal Hex (1.12 format) 1 0 1 4095 FFF 1/256 -48.2 1/256 16 10 1/1024 -60.2 1/1024 4 4 L x L=10 (x/20) D=4095xL H=dec2hex(D) |
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