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M45PE80 Datasheet(PDF) 37 Page - STMicroelectronics

Part # M45PE80
Description  8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
PDF  47 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M45PE80 Datasheet(HTML) 37 Page - STMicroelectronics

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M45PE80
DC and AC parameters
37/47
Table 13.
AC characteristics (33 MHz operation)
33 MHz only available for products marked since week 40 of 2005(1)
Test conditions specified in Table 8 and Table 9
1.
Details of how to find the date of marking are given in Application Note, AN1995.
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
fC
fC
Clock frequency for the following
instructions: FAST_READ, PW, PP, PE,
SE, DP, RDID, RDP, WREN, WRDI,
RDSR
D.C.
33
MHz
fR
Clock frequency for READ instructions
D.C.
20
MHz
tCH
(2)
2.
tCH + tCL must be greater than or equal to 1/ fC
tCLH Clock High time
13
ns
tCL
(2)
tCLL Clock Low time
13
ns
Clock slew rate(3) (peak to peak)
3.
Value guaranteed by characterization, not 100% tested in production.
0.03
V/ns
tSLCH
tCSS S active setup time (relative to C)
10
ns
tCHSL
S not active hold time (relative to C)
10
ns
tDVCH
tDSU Data In setup time
3
ns
tCHDX
tDH
Data In hold time
5
ns
tCHSH
S active hold time (relative to C)
5
ns
tSHCH
S not active setup time (relative to C)
5
ns
tSHSL
tCSH S deselect time
200
ns
tSHQZ
(3)
tDIS Output Disable time
12
ns
tCLQV
tV
Clock Low to Output Valid
12
ns
tCLQX
tHO
Output hold time
0
ns
tTHSL
Top Sector Lock setup time
50
ns
tSHTL
Top Sector Lock hold time
100
ns
tDP
(3)
S to Deep Power-down
3
µs
tRDP
(3)
S High to Standby Power mode
30
µs
tPW
(4)
4.
When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one
sequence including all the bytes versus several sequences of only a few bytes. (1
≤n ≤256)
Page Write cycle time (256 bytes)
11
25
ms
Page Write cycle time (n bytes)
10.2+
n*0.8/256
tPP
(4)
Page Program cycle time (256 bytes)
1.2
5ms
Page Program cycle time (n bytes)
0.4+
n*0.8/256
tPE
Page Erase cycle time
10
20
ms
tSE
Sector Erase cycle time
1
5
s



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