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ISCF8015 Datasheet(PDF) 3 Page - Inchange Semiconductor Company Limited |
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ISCF8015 Datasheet(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 4 page ![]() ISCF8015 SiC N-Channel MOSFET www.iscsemi.com 3 SOURCE-DRAIN BODY DIODE CHARACTERISTICS Drain - Source Body Diode Characteristics VSD Diode Forward Voltage ISD= 25A; VGS= -4V;TJ= 25℃ -- 5.5 -- V ISD= 25A; VGS= -4V;TJ= 150℃ -- 5.0 -- trr Reverse Recovery Time VGS = -5 V, ISD = 50A, VR = 1200V dif/dt=1055 A/µs, -- 98 -- ns Qrr Reverse Recovery Charge -- 920 -- uC TYPICAL CHARACTERISTICS TJ = 25ºC, unless otherwise noted |
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