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ISCF8015 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8015 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page  ISCF8015 SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage with Low On-Resistance · RDS(ON)= 50mΩ（TYP.）@VGS= 20V · High Speed Switching with Low Capacitance · Easy to Parallel and Simple to Drive APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · DC-DC Converters · Batterry Chargers Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1700 V VGSS Gate-Source Opetation Voltage -10/ +25 V ID Drain Current-Continuous 70 A Drain Current-Continuous @Tc=100℃ 50 A IDM Drain Current-Single Pluse 160 A PD Total Dissipation @TC=25℃ 330 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Similar Part No. - ISCF8015 |
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Similar Description - ISCF8015 |
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