Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

L640GU53RI Datasheet(PDF) 24 Page - Advanced Micro Devices

Part # L640GU53RI
Description  64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
PDF  55 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

L640GU53RI Datasheet(HTML) 24 Page - Advanced Micro Devices

Back Button L640GU53RI Datasheet HTML 20Page - Advanced Micro Devices L640GU53RI Datasheet HTML 21Page - Advanced Micro Devices L640GU53RI Datasheet HTML 22Page - Advanced Micro Devices L640GU53RI Datasheet HTML 23Page - Advanced Micro Devices L640GU53RI Datasheet HTML 24Page - Advanced Micro Devices L640GU53RI Datasheet HTML 25Page - Advanced Micro Devices L640GU53RI Datasheet HTML 26Page - Advanced Micro Devices L640GU53RI Datasheet HTML 27Page - Advanced Micro Devices L640GU53RI Datasheet HTML 28Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 24 / 55 page
background image
25
Am29LV641G
June 14, 2005
ADV ANCE
I N FO RMAT I O N
Table 6.
CFI Query Identification String
Table 7.
System Interface String
Table 8.
Device Geometry Definition
Addresses (x16)
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Addresses (x16)
Data
Description
1Bh
0027h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
V
PP Min. voltage (00h = no VPP pin present)
1Eh
0000h
V
PP Max. voltage (00h = no VPP pin present)
1Fh
0003h
Typical timeout per single byte/word write 2
N µs
20h
0000h
Typical timeout for Min. size buffer write 2
N µs (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2
N ms
22h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
0005h
Max. timeout for byte/word write 2
N times typical
24h
0000h
Max. timeout for buffer write 2
N times typical
25h
0002h
Max. timeout per individual block erase 2
N times typical
26h
0000h
Max. timeout for full chip erase 2
N times typical (00h = not supported)
Addresses (x16)
Data
Description
27h
0017h
Device Size = 2
N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com