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L640GU53RI Datasheet(PDF) 37 Page - Advanced Micro Devices |
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L640GU53RI Datasheet(HTML) 37 Page - Advanced Micro Devices |
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37 / 55 page ![]() June 14, 2005 Am29LV641G 38 ADV ANCE I N FO RMAT I O N DC CHARACTERISTICS CMOS Compatible Notes: 1. On the WP# pin only, the maximum input load current when WP# = V IL is ± 5.0 µA. 2. The I CC current listed is typically less than 2 mA/MHz, with OE# at VIH. 3. Maximum I CC specifications are tested with VCC = VCCmax. 4. I CC active while Embedded Erase or Embedded Program is in progress. 5. Automatic sleep mode enables the low power mode when addresses remain stable for t ACC + 30 ns. Typical sleep mode current is 200 nA. 6. If V IO < VCC, maximum VIL for CE# is 0.3 x VIO. If VIO < VCC, minimum VIH for CE# is 0.3 x VIO. 7. Not 100% tested. Parameter Symbol Parameter Description Test Conditions Min Typ Max Unit I LI Input Load Current (Note 1) V IN = VSS to VCC, V CC = VCC max ±1.0 µA I LIT A9, ACC Input Load Current V CC = VCC max; A9 = 12.5 V 35 µA I LO Output Leakage Current V OUT = VSS to VCC, V CC = VCC max ±1.0 µA I CC1 V CC Active Read Current (Notes 2, 3) CE# = V IL, OE# = VIH 5 MHz 9 16 mA 1 MHz 2 4 I CC2 V CC Active Write Current (Notes 3, 4) CE# = V IL, OE# = VIH, WE# = VIL 15 26 mA I CC3 V CC Standby Current (Note 3) CE#, RESET# = V CC ± 0.3 V, WP# = V IH 0.2 5 µA I CC4 V CC Reset Current (Note 3) RESET# = V SS ± 0.3 V, WP# = VIH 0.2 5 µA I CC5 Automatic Sleep Mode (Notes 3, 5) V IH = VCC ± 0.3 V; V IL = VSS ± 0.3 V, WP# = VIH 0.2 5 µA V IL Input Low Voltage (Note 6) –0.5 0.8 V V IH Input High Voltage (Note 6) 0.7 x V CC V CC + 0.3 V V HH Voltage for ACC Program Acceleration V CC = 3.0 V ± 10% 11.5 12.5 V V ID Voltage for Autoselect and Temporary Sector Unprotect V CC = 3.0 V ± 10% 8.5 12.5 V V OL Output Low Voltage I OL = 4.0 mA, VCC = VCC min 0.45 V V OH1 Output High Voltage (Note 7) I OH = –2.0 mA, VCC = VCC min 0.85 x V IO V V OH2 I OH = –100 µA, VCC = VCC min V IO–0.4 V V LKO Low V CC Lock-Out Voltage (Note 7) 2.3 2.5 V |
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