DS30799 Rev. 2 - 2

1 of 4

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DMN2005LP4K

© Diodes Incorporated

DMN2005LP4K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Low On-Resistance

•

Very Low Gate Threshold Voltage, 0.9V Max.

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

Lead Free By Design/RoHS Compliant (Note 2)

•

"Green" Device (Note 4)

•

ESD Protected Gate

•

Ultra Low Profile Package

Mechanical Data

•

Case: DFN1006H4-3

•

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating

94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminal Connections: See Diagram

•

Terminals: Finish

⎯ NiPdAu annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

•

Marking: See Page 4

•

Ordering & Date Code Information: See Page 4

•

Weight: 0.001 grams

DFN1006H4-3

Dim

Min

Max

Typ

A

0.95

1.075

1.00

B

0.55

0.675

0.60

C

0.45

0.55

0.50

D

0.20

0.30

0.25

G

—

0.40

—

H

0

0.05

0.02

K

0.10

0.20

0.15

ESD protected

D

S

G

TOP VIEW

L

0.20

0.30

0.25

M

—

—

0.35

N

—

—

0.40

All Dimensions in mm

G H

B C

A

M

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±10

V

Drain Current per element (Note 1)

Continuous

Pulsed (Note 3)

200

250

mA

Total Power Dissipation (Note 1)

200

mW

Thermal Resistance, Junction to Ambient

625

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Notes:

1.

Device mounted on FR-4 PCB.

2.

No purposefully added lead.

3.

Pulse width

≤10μS, Duty Cycle ≤1%.

4.

Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

Source

Body

Diode

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

Drain

L

N

D

K

SIDE VIEW

BOTTOM VIEW

SPICE MODEL: DMN2005LP4K