Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (per element) (Note 5)

Drain-Source Breakdown Voltage

20

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

10

μA

Gate-Source Leakage

⎯

⎯

±5

μA

ON CHARACTERISTICS (per element) (Note 5)

Gate Threshold Voltage

0.53

⎯

0.9

V

Static Drain-Source On-Resistance

⎯

⎯

⎯

⎯

⎯

0.9

0.85

1.2

2.4

2.5

1.5

1.7

1.7

3.5

3.5

Ω

Forward Transfer Admittance

⏐Y

40

⎯

⎯

mS

Notes: 5. Short duration test pulse used to minimize self-heating effect.

0

0

1

2

3

4

V

DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

Ta = 25 C

o

V

= 1.0V

GS

V

= 1.2V

GS

V

= 1.4V

GS

V

= 1.6V

GS

V

=1.8V

GS

V

= 2.0V

GS

V

, GATE-SOURCE VOLTAGE (V)

Fig. 2

GS

Reverse Drain Current vs. Source-Drain Voltage

T = 25 C

A

1

°

T = 5 C

A

8

°

T = 25 C

A

°

T =

C

A

0

°

T = -55 C

A

°

T = 150 C

A

°

T , AMBIENT TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage vs. Ambient Temperature

A

I

DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current

D,

T = 150 C

A

°

T=

C

A

25

°

T=

C

A

0

°

T=

C

A

-55

°

T=

C

A

85

°

T = 125 C

A

°

DS30799 Rev. 2 - 2

2 of 4

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