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AM29PDL640G73WHI Datasheet(PDF) 57 Page - Advanced Micro Devices |
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AM29PDL640G73WHI Datasheet(HTML) 57 Page - Advanced Micro Devices |
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57 / 61 page ![]() December 13, 2005 Am29PDL640G 55 D A TA SH EE T ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90 °C, V CC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables Table 14 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. BGA BALL CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions T A = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.4 5 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 56 sec Word Program Time 7 210 µs Excludes system level overhead (Note 5) Accelerated Word Program Time 4 120 µs Chip Program Time (Note 3) 28 84 sec Description Min Max Input voltage with respect to V SS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 13 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V VCC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 4.2 5.0 pF COUT Output Capacitance VOUT = 0 5.4 6.5 pF CIN2 Control Pin Capacitance VIN = 0 3.9 4.7 pF Parameter Description Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C10 Years 125 °C20 Years |
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