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ISCF8021 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISCF8021
Description  SiC N-Channel MOSFET
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8021 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8021 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8021 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8021 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8021 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISCF8021
eq C3M0075120K
SiC N-Channel MOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.1mA
1200
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V; ID = 5mA
2.0
2.8
3.6
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 18V; ID=20A
-
75
80
mΩ
RDS(ON)
Drain-Source On-stage Resistance
VGS= 18V; ID=40A;TJ=175℃
--
125
--
mΩ
IGSS
Gate Source Leakage Current
VGS= 18V; VDS= 0V
--
10
250
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V; VGS = 0V
--
1
50
μA
gfS
Transconductance
VDS = 20V; ID=40A
--
10
--
S
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1MHz
VAC=25mV
--
920
--
pF
Coss
Output Capacitance
--
60
--
Crss
Reverse Transfer Capacitance
--
4
--
Qg
Total Gate Charge
VDD=800V,
ID= 20A,
VGS= - 4to +18V
--
40
--
nC
Qgs
Gate-Source Charge
--
7.5
--
Qgd
Gate-Drain Charge
--
20
--
td(on)
Turn-on Delay Time
VGS= - 4to +18V
ID= 20A,
VDS=800V,
Rg=2.5Ω,
inductive load
--
19
--
ns
tr
Turn-on Rise Time
--
21
--
td(off)
Turn-off Delay Time
--
15
--
tf
Turn-off Fall Time
--
17
--
EON
Turn-On Switching Energy
(SiC Diode FWD)
VGS= - 4to +15V
ID= 40A,
VDS=800V,
Rg=2.5Ω
--
320
--
uJ
EOFF
Turn Off Switching Energy
(SiC Diode FWD)
--
48
--



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