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ISCF8021 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8021 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() ISCF8021 eq C3M0075120K SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage with Low On-Resistance · RDS(ON)= 75mΩ(TYP.)@VGS=18V Tj=25℃ · High Speed Switching with Low Capacitance · Easy to Parallel and Simple to Drive APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · DC-DC Converters · Motor drives Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGSS Gate-Source Opetation Voltage -4/+18 V ID Drain Current-Continuous 38 A Drain Current-Continuous@Tc=100℃ 27 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 214 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃ /W |
Similar Part No. - ISCF8021 |
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Similar Description - ISCF8021 |
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