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ISCF8022 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISCF8022
Description  SiC N-Channel MOSFET
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8022 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8022 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8022 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8022 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISCF8022
eq G3R450MT17D
SiC N-Channel MOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.25mA
1700
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V; ID = 1mA
2
2.7
4.5
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 15V; ID=4A
--
450
585
mΩ
RDS(ON)
Drain-Source On-stage Resistance
VGS= 15V; ID=4A;TJ=175℃
--
875
--
mΩ
IGSS
Gate Source Leakage Current
VGS= -10/+20V; VDS= 0V
--
--
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V; VGS = 0V
--
1
10
μA
RG
Internal Gate Resistance
f = 1MHz,VAC=25mV
--
3
--
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1MHz
VAC=25mV
--
335
--
pF
Coss
Output Capacitance
--
19
--
Crss
Reverse Transfer Capacitance
--
4
--
Qg
Total Gate Charge
VDD=800V,
ID= 6A,
VGS= - 3to +20V
--
31
--
nC
Qgs
Gate-Source Charge
--
2.2
--
Qgd
Gate-Drain Charge
--
16
--
td(on)
Turn-on Delay Time
VGS= - 3to +20V
ID=6A,
VDS=800V,
Rg=25Ω,
--
34
--
ns
tr
Turn-on Rise Time
--
22
--
td(off)
Turn-off Delay Time
--
39
--
tf
Turn-off Fall Time
--
34
--
Drain - Source Body Diode Characteristics
IS
Continuous Diode Forward Current
VGS= -5V; TC=100℃
7
--
--
A
VSD
Diode Forward Voltage
ISD= 3A; VGS= -3V
--
4.2
--
V
trr
Reverse Recovery Time
VGS = -3 V/+20V
ISD = 6 A,
VR = 400V
dif/dt=100 A/µs
--
17
--
ns
Qrr
Reverse Recovery Charge
--
5
--
uC



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