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ISCF8022 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8022 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISCF8022 eq G3R450MT17D SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · Low Capacitances and Low Gate Charge · High V for Increased System Stability · Fast and Reliable Body Diode · High Avalanche and Short Circuit Ruggedness APPLICATIONS · Witch Mode Power Supply(SMPS) · Power Factor Correction(PFC) · Uninterruptible Power Supply (UPS) · Motor drives Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1700 V VGSS Gate-Source Opetation Voltage -10/+20 V ID Drain Current-Continuous 9 A Drain Current-Continuous@Tc=100℃ 6 A Drain Current-Continuous@Tc=135℃ 5 A IDM Drain Current-Single Pluse 16 A PD Total Dissipation @TC=25℃ 88 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.7 ℃ /W |
Similar Part No. - ISCF8022 |
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Similar Description - ISCF8022 |
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