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ISCF8024 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISCF8024
Description  SiC N-Channel MOSFET
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8024 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8024 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8024 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8024 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISCF8024
SiC N-Channel MOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V, ID= 0.1mA
1700
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 50mA
1.5
2.6
4.5
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 20V, ID=30A
--
45
70
mΩ
VGS= 20V, ID=30A,TJ=175℃
--
100
--
IGSS
Gate Source Leakage Current
VGS= 20V, VDS= 0V
--
--
250
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1700V, VGS = 0V
--
--
100
μA
VDS = 1700V, VGS = 0V
TJ=175℃
--
--
500
μA
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1.0MHz,
VAC=25mV
--
4141
--
pF
Coss
Output Capacitance
--
145
--
Crss
Reverse Transfer Capacitance
--
25
--
RG
Internal Gate Resistance
f=1MHz, VAC=25mV
--
0.7
--
Ω
td(on)
Turn-on Delay Time
VGS= - 4/20V
ID= 30A,
VDS= 1200V,
RG=2.7Ω,
RL=40Ω
--
51
--
ns
tr
Turn-on Rise Time
--
53
--
td(off)
Turn-off Delay Time
--
59
--
tf
Turn-off Fall Time
--
22
--
SIC DIODE CHARACTERISTICS(TC=25℃)
VSD
Diode Forward Voltage
ISD= 7.5A, VGS=0V
--
2.7
--
V
IS
Continuous Diode Forward Current
TC=25℃
--
54
--
A
trr
Reverse Recovery Time
ISD = 30A,
VR = 400V
di/dt=300A/s
--
78.6
--
ns
Qrr
Reverse Recovery Charge
--
248
--
nC
Irrm
Peak Reverse Recovery Current
--
6.4
--
A



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