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ISCF8024 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8024 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISCF8024 SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · Low On-Resistance and High Current Density · Low Capacitance for High Frequency Operation · Ultra-high Avalanche Ruggedness · Positive Temperature Coefficient Device APPLICATIONS · Switching Mode Power Supply · DC/DC Converters, UPS, and PFC · Power Inverters · Auxiliary Power Supplies · Solar/Wind Renewable Energy Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1700 V VGS(MAX) Gate-Source Opetation Voltage -10/+25 V VGS(OP) Gate-Source Opetation Voltage -5/+20 V ID Drain Current-Continuous@Tc=25℃ 55 A Drain Current-Continuous@Tc=110℃ 38.5 A IDM Drain Current-Single Pluse 280 A PD Total Dissipation @TC=25℃ 375 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.4 ℃ /W |
Similar Part No. - ISCF8024 |
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Similar Description - ISCF8024 |
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