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AS4SD16M16 Datasheet(PDF) 39 Page - Austin Semiconductor |
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AS4SD16M16 Datasheet(HTML) 39 Page - Austin Semiconductor |
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39 / 51 page  SDRAM SDRAM SDRAM SDRAM SDRAM AS4SD16M16 Austin Semiconductor, Inc. AS4SD16M16 Rev. 1.0 11/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 39 SINGLE READ - WITH AUTO PRECHARGE1 *CAS latency indicated in parentheses. NOTES: 1. For this example, the burst length = 1, the CAS latency = 2. 2. A9, A11, and A12 = “Don’t Care” 3. READ command not allowed else t RAS would be violated. TIMING PARAMETERS MIN MAX MIN MAX tAC(3) 5.4 ns tCMH 0.8 ns tAC(2) 6 ns tCMS 1.5 ns tAH 0.8 ns tHZ(3) 5.4 ns tAS 1.5 ns tHZ(2) 6ns tCH 2.5 ns tLZ 1ns tCL 2.5 ns tOH 3ns tCK(3) 7.5 ns tRAS 44 80,000 ns tCK(2) 10 ns tRC 66 ns tCKH 0.8 ns tRCD 20 ns tCKS 1.5 ns tRP 20 ns -75 UNITS -75 SYMBOL* UNITS SYMBOL* |
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