2001 Jun 11

2

Philips Semiconductors

Product specification

PNP resistor-equipped transistor

PDTA124EEF

FEATURES

• Built-in bias resistors R1 and R2 (typical 22 kΩ each)

• Simplification of circuit design

• Reduces number of components and board space.

APPLICATIONS

• Especially suitable for space reduction in interface and

driver circuits

• Inverter circuit configuration without use of external

resistors.

DESCRIPTION

PNP resistor equipped transistor in an SC-89 (SOT490)

plastic package.

MARKING

PINNING

TYPE NUMBER

MARKING CODE

PDTA124EEF

3R

PIN

DESCRIPTION

1

base/input

2

emitter/ground (+)

3

collector/output

handbook, halfpage

MAM413

1

2

3

R1

R2

12

Top view

3

Fig.1

Simplified outline (SC-89; SOT490)

and symbol.

MGA893 - 1

1

3

2

Fig.2 Equivalent circuit.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−50

V

collector-emitter voltage

open base

−−50

V

emitter-base voltage

open collector

−−10

V

input voltage

positive

−

+10

V

negative

−−40

V

output current (DC)

−−100

mA

peak collector current

−−100

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C