PDTA124EEF datasheet(3/8 Pages) PHILIPS

3 / 8 page

2001 Jun 11

Philips Semiconductors

Product speciﬁcation

PNP resistor-equipped transistor

PDTA124EEF

THERMAL CHARACTERISTICS

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −50 V

−−−100

ICEO

collector cut-off current

IB = 0; VCE = −30 V

−−−1

µA

IB = 0; VCE = −30 V; Tj = 150 °C

−−−50

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−180

µA

hFE

DC current gain

IC = −5 mA; VCE = −5V

−−

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−−−150

Vi(off)

input-off voltage

IC = −100 µA; VCE = −5V

−−1.14 −0.8

Vi(on)

input-on voltage

IC = −5 mA; VCE = −0.3 V

−2.5

−1.7

−

input resistor

15.4

28.6

Ω

resistor ratio

0.8

1.2

collector capacitance

IE =ie = 0; VCB = −10 V;

f = 1 MHz

−−

3pF

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