©2003 Silicon Storage Technology, Inc.

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The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

FEATURES:

•

Single 3.0-3.6V Read and Write Operations

•

Serial Interface Architecture

•

Byte Serial Read with Single Command

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption

– Active Current: 10 mA (typical)

– Standby Current: 10 µA (typical)

•

Sector or Chip-Erase Capability

– Uniform 4 KByte sectors

•

Fast Erase and Byte-Program

– Chip-Erase Time: 70 ms (typical)

– Sector-Erase Time: 18 ms (typical)

– Byte-Program Time: 14 µs (typical)

•

Automatic Write Timing

•

End-of-Write Detection

– Software Status

•

10 MHz Max Clock Frequency

•

Hardware Reset Pin (RST#)

– Resets the device to Standby Mode

•

CMOS I/O Compatibility

•

Hardware Data Protection (WP#)

– Protects and unprotects the device from Write

operation

•

Packages Available

– 8-lead SOIC (4.9mm x 6mm)

– 8-contact WSON

PRODUCT DESCRIPTION

The SST45LF010 is a 1 Mbit serial flash memory manufac-

tured with SST’s proprietary, high performance CMOS

SuperFlash technology. The 1 Mbit of memory is organized

as 32 sectors of 4096 Bytes. The flash memory uses a 4-

wire serial interface and a chip enable to select and

sequentially access its data. The serial interface consists

of; serial data input (SI), serial data output (SO), serial clock

(SCK), and chip enable (CE#). A write protect (WP#) inhib-

its the entire memory from Write operation and a hardware

reset pin (RST#) resets the device to standby mode.

The SST45LF010 device is offered in both 8-lead SOIC

and 8-contact WSON packages. See Figure 2 for the pin

assignments.

Device Operation

The SST45LF010 uses bus cycles of 8 bits each for com-

mands, data, and addresses to execute operations. The

operation instructions are listed in Table 3.

All instructions are synchronized off a high to low transition

of CE#. The first low to high transition on SCK will initiate

the instruction sequence. Inputs will be accepted on the ris-

ing edge of SCK starting with the most significant bit. Any

low to high transition on CE# before the input instruction

completes will terminate any instruction in progress and

return the device to the standby mode.

Read

The Read operation outputs the data in order from the ini-

tial accessed address. While SCK is input, the address will

be incremented automatically until end (top) of the address

space (1FFFFH), then the internal address pointer auto-

matically increments to beginning (bottom) of the address

space (00000H), and data out stream will continue. The

read data stream is continuous through all addresses until

terminated by a low to high transition on CE#.

Sector/Chip-Erase Operation

The Sector-Erase operation clears all bits in the selected

sector to FFH. The Chip-Erase instruction clears all bits in

the device to FFH.

Byte-Program Operation

The Byte-Program operation programs the bits in the

selected byte to the desired data. The selected byte must

be in the erased state (FFH) when initiating a Program

operation. The data is input from bit 7 to bit 0 in order.

Software Status Operation

The Status operation determines if an Erase or Program

operation is in progress. If bit 0 is at a “0” an Erase or Pro-

gram operation is in progress, the device is busy. If bit 0 is

at a “1” the device is ready for any valid operation. The sta-

tus read is continuous with ongoing clock cycles until termi-

nated by a low to high transition on CE#.

1 Mbit Serial Flash

SST45LF010

SST45LF0101Mb 4-wire Serial Interface flash memory