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APM4953 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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APM4953 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 6 page ![]() APM4953 Absolute Maximum Ratings (T A=25 oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Drain Current (Continuous) -5.3 A IDM Drain Current (Pulsed) a -20 A PD Total Power Dissipation @TA=25 oC 2.0 W IS Maximum Diode Forward Current -1.9 A Tj, Tstg Operating Junction and Storage Temperature Range -55 to +150 °C RθJA Thermal Resistance Junction to Ambient (PCB mounted) b 50 °C/W a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in 2 2oz Cu PCB board -30V P-Channel MOSFET APM4953 Features VDS (V) = -30V ID = -5.3A (VGS = 10V) RDS(ON) < 41mΩ (VGS = -10V) RDS(ON) < 75mΩ (VGS = -4.5V) Rev:2023A2 1 G1 D1 S1 G2 D2 S2 G1 S1 G2 S2 D1 D1 D2 D2 1 2 3 4 8 7 6 5 |
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