APM4953 datasheet(2/6 Pages) EVVOSEMI

2 / 6 page

Electrical Characteristics (T

A=25°C, unless otherwise noted)

Symbol

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

-1

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

ON CHARACTERISTICS

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-1.5

-2.5

VGS=-10V, ID=-5.3A

RDS(on)

Drain-Source On-State Resistance

VGS=-4.5V, ID=-3.9A

gFS

Forward Transconductance

VDS=-10V, ID=-5.3A

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

504

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS=-15V, VGS=0V, f=1MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Qgs

Gate-Source Charge

2.3

Qgd

Gate-Drain Charge

VDS=-15V, ID=-3.6A, VGS=-10V

1.4

td(on)

Turn-on Delay Time

8.1

Turn-on Rise Time

3.3

td(off)

Turn-off Delay Time

29.3

Turn-off Fall Time

VDD=-15V, RL=5Ω, ID=-3A,

VGEN=-10V, RG=6Ω

5.6

Drain-Source Diode Characteristics

VSD

Drain-Source Diode Forward Voltage

VGS=0V, IS=-1.9A

-1.3

Note: Pulse Test: Pulse Width

≤300us, Duty Cycle≤2%

APM4953

-30V P-Channel MOSFET

APM4953

Rev:2023A2

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