FDN327 datasheet(3/5 Pages) EVVOSEMI

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Typical Characteristics

0.5

1.5

2.5

3.5

VDS, DRAIN-SOURCE VOLTAGE (V)

1.8V

2.0V

GS = 4.5V

3.0V

2.5V

0.8

1.2

1.4

1.6

1.8

ID, DRAIN CURRENT (A)

VGS = 1.8V

2.5V

2.0V

4.5V

3.0V

3.5V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1.2

1.4

1.6

-50

-25

100

125

150

TJ, JUNCTION TEMPERATURE (

oC)

ID = 2A

VGS = 4.5V

0.02

0.06

0.1

0.14

0.18

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 1A

A = 125

TA = 25

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0.5

1.5

2.5

VGS, GATE TO SOURCE VOLTAGE (V)

TA =-55

125

VDS = 5V

0.0001

0.001

0.01

0.1

100

0.2

0.4

0.6

0.8

1.2

1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

A = 125

-55

VGS = 0V

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

N-Channel 2.5 V (D-S) MOSFET

FDN327

Rev:2023A2

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