Analog Integrated Circuit Device Data

6

Freescale Semiconductor

33661

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Low-Level Bus Voltage (Dominant State)

External Bus Pullup 500

Ω

—

—

1.4

V

High-Level Bus Voltage (Recessive State)

—

—

V

20

30

47

k

Ω

Internal Pullup Current Source (Sleep Mode)

—

20

—

µA

Overcurrent Shutdown Threshold

50

75

150

mA

Leakage Current to GND

Recessive State, 8.0 V

≤ V

0

-1.0

—

3.0

—

1.0

20

1.0

10

µA

mA

µA

LIN Receiver, Low-Level Input Voltage

TXD HIGH, RXD LOW

—

V

LIN Receiver, High-Level Input Voltage

TXD HIGH, RXD HIGH

—

V

LIN Receiver Threshold Center

V

LIN Receiver Input Voltage Hysteresis

—

—

V

LIN Wake-Up Threshold Voltage

—

—

V

INH OUTPUT PIN

Driver ON Resistance (Normal Mode)

—

35

70

Ω

Leakage Current (Sleep Mode)

0

—

5.0

µA

WAKE INPUT PIN

Typical Wake-Up Threshold Voltage (EN = 0 V, 7.0 V

≤ V

(5)

HIGH-to-LOW Transition

LOW-to-HIGH Transition

V

Wake-Up Threshold Voltage Hysteresis

V

WAKE Input Current

—

1.0

5.0

µA

Notes

4

This parameter is guaranteed by design; however, it is not production tested.

5

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions 7.0 V

≤ V

Characteristic

Symbol

Min

Typ

Max

Unit