Analog Integrated Circuit Device Data

8

Freescale Semiconductor

33661

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

SLEEP MODE AND WAKE-UP TIMINGS

EN Pin Wake-Up Time (9)

—

5.0

15

µs

WAKE Pin Filter Time (10)

10

—

70

µs

LIN Pin Wake-Up Filter Time (LIN Bus Wake-Up) (11)

40

70

120

µs

Sleep Mode Delay Time (12)

EN HIGH-to-LOW

50

—

—

µs

Delay for INH Turning off When Device Enters in Sleep Mode(16), (17)

EN HIGH-to-LOW and INH HIGH-to-LOW

—

—

50

µs

Delay Time Between EN and TXD for Mode Selection (13), (14)

5.0

—

—

µs

Delay Time Between First TXD after Device Mode Selection (13), (14)

50

—

—

µs

FAST BAUD RATE TIMING

Delay Entering Fast Baud Rate Using Toggle Function (15)

EN LOW to EN HIGH

—

—

35

µs

Delay on EN Pin Resetting Fast Baud Rate to Previous Baud Rate (15)

EN LOW to EN HIGH

—

—

5.0

µs

Notes

9

See Figures 7 and 8, 10.

10

See Figures 9 and 10, 10.

11

See Figures 11 and 12, 11.

12

See Figure 14a, 11.

13

See Figures 7 through 12, pp. 10–11.

14

This parameter is guaranteed by design; however, it is not production tested.

15

See Figure 13, 11.

16

No capacitor is connected to the INH pin. Measurement is done between the EN HIGH-to-LOW transition at 80% of INH voltage.

17

See Figure 14b, 11.

Table 4. Dynamic Electrical Characteristics (continued)

Characteristics noted under conditions 7.0 V

≤ V

Characteristic

Symbol

Min

Typ

Max

Unit